Advanced Scanning Electron Microscopy (SEM) and Spectroscopy

  • Zeiss Merlin VP SEM
    This SEM features variable-pressure capability to optimize studies of nonconductive samples or samples with low vapor pressures. Equipped with BF-STEM detector, surface profile backscatter imaging, and EDS spectroscopy.
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Advanced Transmission Electron Microscopy (TEM), Scanning Transmission Electron Microscopy (STEM), Electron Energy Loss Spectroscopy (EELS), and Energy Dispersive Spectroscopy (EDS)

  • Soft Matter TEM (Zeiss Libra 120 TEM)
    This TEM features variable voltage (60 to 120 kV) and offers enhanced capabilities for studies of soft nanomaterials while maintaining precision needed for work in catalysts and other “hard” nanomaterials. The instrument is equipped with in-line EELS, providing real-time energy filtered imaging, high angular resolution nano-diffraction, and has cryogenic specimen-loading capabilities.
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  • Hitachi HF3300 high-resolution TEM-STEM
    Instrument combines high-resolution TEM structure imaging (<1.2Å) with high-resolution STEM (HAADF and BF) detectors and a secondary electron (SE) detector for SEM imaging. Primary operation is conducted at 300 kV. Microscope features a Gatan Quantum EELS/GIF and a Bruker silicon drift detector (SDD) for EDS spectrum imaging. Specialized in-situ holders are available for heating (up to 1200°C Protochips Aduro), cryo-transfer (Gatan CT3500), Hitachi 360° rotation micropillar tomography, nanoindenter (Hysitron), and liquid flow cell (Hummingbird).
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  • Nion UltraSTEM 100 (U100) dedicated aberration-corrected STEM Instrument features a 3rd-generation C3/C5 aberration corrector, 0.5 nA current in atomic-size probe, ~1.0-1.1Å HAADF-STEM imaging resolution at 60 kV and 100 kV operating voltages. The Nion U100 features a Gatan Enfina EELS and a cold FEG for energy resolutions <350 meV at 100kV. This instrument has an unparalleled combination of atomic-resolution imaging and spectroscopy at mid- and low-voltages, and is especially valuable for the characterization of 2-dimensional materials (graphene, BN, transition metal dichalcogenides, etc.), catalysts, and other beam-sensitive materials.
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  • FEI Titan S aberration-corrected TEM-STEM
    Probe-corrected microscope features a Gatan Quantum EELS and Gatan Imaging Filter (GIF), with dual-EELS and fast spectrum imaging capabilities, an ‘extreme Schottky’ high-brightness field emission gun (X-FEG), and variable operating voltages (60, 120, and 300 kV). Instrument is equipped with high-angle annular dark field (HAADF), annual dark field (ADF), and bright field (BF) STEM detectors for sub-Å imaging.  The FEI Titan-S aberration-corrected TEM/STEM has recently undergone major upgrades to enhance CNMS capabilities for analytical and in-situ microscopy: (i) addition of a large active area (60mm2) EDAX silicon drift detector (SDD) for high-collection-efficiency energy dispersive X-ray spectroscopy (EDS), enabling the simultaneous acquisition of EDS and EELS spectrum images; (ii) Protochips Atmosphere gas environmental cell holder for conducting in-situ gas reactions at pressures to 1 atm. and temperatures up to 1000°C.  This new holder complements other specialized/in-situ holders available for use on the Titan, including holders for electrochemistry/liquid-flow (Protochips Poseidon), electrical biasing and heating (Protochips Aduro PE), in-situ AFM/STM (Nanofactory), 3D electron tomography, and LN2 cooling; (iii) Gatan OneView CMOS camera with in-situ option for high-frame-rate image/video capture.
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Instruments for Atom Probe Tomography (APT)

  • Cameca Instruments Local Electrode Atom Probe (LEAP) 4000X HR
    Advanced LEAP features a 1 MHz laser and 250 kHz high-voltage pulse generator, reflectron energy compensating lens, and a crossed delay line, single atom, position-sensitive detector. Instrument is used for the atomic level 3-dimensional compositional characterization of a wide range of materials, including metallic conductors, semi-conductors, oxides, and nanostructured materials.
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  • FEI Nova 200 dual beam focused ion beam (FIB)-SEM
    The FIB is dedicated to precision preparation and annular milling of needles required for APT, and is equipped with an annual STEM detector for site-specific FIB-milling, a Kleindiek nano-manipulator, and EDS.
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Helium-ion Microscopy

  • Zeiss Orion NanoFab
    The Zeiss Orion Nanofab helium-ion microscope (HIM) features three primary capabilities: imaging, detailed ion-milling/patterning using He-ions, and high-rate milling using heavier Neon ions. It is located in the CNMS cleanroom to facilitate clean transfer of samples.

    This instrument has the ability to image, in the manner of an SEM, at unprecedented resolution and with high surface sensitivity; and the ability to pattern through direct ion-milling and exposure of lithographic resists, down to feature sizes of about 5 nm. The instrument is complementary to a Focused Ion Beam (FIB), but capable of feature sizes 10-20 times smaller. Scientifically, the instrument allows users to explore entirely new types of devices and engineered nanostructures that cannot be fabricated with other techniques.
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Capabilities provided by other CNMS groups